Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• . Keywords: angle dependency; argon; contamination; energy dependency; ion bombardment; low energy; molecular dynamics; silicon; simulations; water; Introduction Low-energy ion beams offer substantial improvements and possibilities to reduce the damage production on the surface of samples [1][2]. In recent

• energy variations on the sputtering processes, while discussing the angle dependency for some conditions. To perform such analysis, we selected several angles and energies. For the impact energy, we selected 50, 100, 200, 300, 400, and 500 eV to stay in the ultralow-energy domain. For the angles, we

• increase the yield, and we can still observe some angle dependency, with a maximum sputtering yield for angles between 60° and 75°. A difference appears above 80°, where the sharp decrease observed for silicon particles is less pronounced for water. In our simulations, the water layer is not renewed

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%. Keywords: angle dependency; argon ions; contamination; focused ion beams; ion bombardment; low energy